? semiconductor components industries, llc, 1994 october, 2016 ? rev. 8 1 publication order number: mbd301/d mbd301g, mmbd301lt1g, mmbd301lt3g, SMMBD301LT3G silicon hot-carrier diodes schottky barrier diodes these devices are designed primarily for high?efficiency uhf and vhf detector applications. they are readily adaptable to many other fast switching rf and digital applications. they are supplied in an inexpensive plastic package for low?cost, high?volume consumer and industrial/commercial requirements. they are also available in a surface mount package. features ? extremely low minority carrier lifetime ? 15 ps (typ) ? very low capacitance ? 1.5 pf (max) @ v r = 15 v ? low reverse leakage ? i r = 13 nadc (typ) mbd301, mmbd301 ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbo l value unit reverse voltage v r 30 v forward current (dc) i f 200 (max) ma total device dissipation @ t a = 25 c mbd301g mmbd301l t1g, mmbd301l t3g, SMMBD301LT3G derate above 25 c mbd301g mmbd301l t1g, mmbd301l t3g, SMMBD301LT3G p f 280 200 2.8 2.0 mw mw/ c operating junction temperature range t j ?55 to +125 c storage temperature range t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be af fected. see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information 30 volts silicon hot?carrier detector and switching diodes sot?23 (to?236) case 318 style 8 3 cathode 1 anode 2 cathode 1 anode to?92 2?lead case 182 style 1 sot?23 to?92 marking diagrams *date code orientation and/or overbar may vary depending upon manufacturing location. 1 4t m a = assembly location y = year w = work week 4t = device code (sot?23) m = date code* = pb?free package (note: microdot may be in either location) mbd 301 ayw sot?23 to?92 www. onsemi.com
mbd301g, mmbd301lt1g, mmbd301lt3g, SMMBD301LT3G www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 a) v (br)r 30 ? ? v total capacitance (v r = 15 v, f = 1.0 mhz) figure 1 c t ? 0.9 1.5 pf reverse leakage (v r = 25 v) figure 3 i r ? 13 200 nadc forward v oltage (i f = 1.0 madc) figure 4 v f ? 0.38 0.45 vdc forward v oltage (i f = 10 madc) figure 4 v f ? 0.52 0.6 vdc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. ordering information device package shipping ? mbd301g to?92 (pb?free) 5,000 units / bulk mmbd301lt1g sot?23 (pb?free) 3,000 / tape & reel mmbd301lt3g sot?23 (pb?free) 10,000 / tape & reel SMMBD301LT3G sot?23 (pb?free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd801 1/d.
mbd301g, mmbd301lt1g, mmbd301lt3g, SMMBD301LT3G www. onsemi.com 3 typical electrical characteristics figure 1. total capacitance v r , reverse voltage (volts) figure 2. minority carrier lifetime i f , forward current (ma) figure 3. reverse leakage v r , reverse voltage (volts) figure 4. forward voltage v f , forward voltage (volts) , forward current (ma) i f , reverse leakage ( a) i r 0.2 0.4 0.6 0.8 1.0 1.2 100 10 0 6.0 12 18 24 10 1.0 0.1 0.01 0.001 01020 500 0 0 3.0 6.0 9.0 12 15 21 1.6 30 24 27 18 1.2 0.8 0.4 f = 1.0 mhz t a = -40 c t a = 85 c t a = 25 c 1.0 0.1 30 40 50 60 70 80 100 90 krakauer method 0 2.8 2.4 2.0 30 t a = 100 c 75 c 25 c , total capacitance (pf) c t , minority carrier lifetime (ps) 400 300 200 100 sinusoidal generator ballast network (pads) sampling oscilloscope (50 input) pads capacitive conduction forward conduction storage conduction dut i f(peak) i r(peak) figure 5. krakauer method of measuring lifetime
mbd301g, mmbd301lt1g, mmbd301lt3g, SMMBD301LT3G www. onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond zone r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. a l k b r p d h g xx seating plane 12 v n c n section x?x d j dim min max min max millimeters inches a 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.050 bsc 1.27 bsc h 0.100 bsc 2.54 bsc j 0.014 0.016 0.36 0.41 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.03 2.66 p --- 0.050 --- 1.27 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- style 1: pin 1. anode 2. cathode to?92 (to?226ac) case 182?06 issue l
mbd301g, mmbd301lt1g, mmbd301lt3g, SMMBD301LT3G www. onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. style 8: pin 1. anode 2. no connection 3. cathode on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, i ncluding ?typicals? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such uninten ded or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mbd301/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your lo cal sales representative ?
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